IPI029N06NAKSA1 datasheet

Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)

• Маркировка
  IPI029N06NAKSA1
• Производитель
  Infineon Technologies
• Описание
  Infineon Technologies IPI029N06NAKSA1 Continuous Drain Current: 100 A Drain-source Breakdown Voltage: 60 V Fall Time: 8 ns Forward Transconductance Gfs (max / Min): 160 S Gate Charge Qg: 56 nC Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: PG-TO262-3 Part # Aliases: IPI029N06N IPI029N06NXK Power Dissipation: 136 W Resistance Drain-source Rds (on): 2.9 mOhms Rise Time: 15 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 30 ns RoHS: yes Drain-Source Breakdown Voltage: 60 V Resistance Drain-Source RDS (on): 2.9 mOhms Forward Transconductance gFS (Max / Min): 160 S Typical Turn-Off Delay Time: 30 ns
• Количество страниц
  9 шт.
• Формат
  PDF

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• Размер файла
  263,04 KB

IPI029N06NAKSA1 datasheet скачать

IPI029N06NAKSA1 datasheet